Rohrbach, Germany

Rainer Bergmann

This inventor holds 1 USPTO granted patent. Top assignee: Siemens Aktiengesellschaft. Active years: 1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rainer Bergmann. Retrieved from https://idiyas.com/inventor/rainer-bergmann

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: Rainer Bergmann: Innovator in Semiconductor Technology

Introduction

Rainer Bergmann is a notable inventor based in Rohrbach, Germany. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs that enhance device performance.

Latest Patents

Bergmann holds a patent for a MOS semiconductor device that features a high blocking voltage. This semiconductor component includes a planar structure with a channel stopper formed at one edge and a field electrode that covers a pn-junction of the planar zones adjoining the edge. The design allows for an increased blocking voltage by incorporating a channel stopper field plate arranged over the channel stopper and an anode field plate positioned over the field electrode. These field plates are spaced at a greater distance from the surface of the semiconductor body between the electrodes, enhancing the overall efficiency of the device.

Career Highlights

Rainer Bergmann is associated with Siemens Aktiengesellschaft, a leading global technology company. His work at Siemens has allowed him to focus on advancing semiconductor technologies and contributing to the company's innovative projects.

Collaborations

Bergmann has collaborated with Josef-Matthias Gantioler, working together to push the boundaries of semiconductor research and development.

Conclusion

Rainer Bergmann's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a key figure in the field. His work continues to influence advancements in electronic devices and systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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