The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 1990

Filed:

Apr. 20, 1989
Applicant:
Inventors:

Rainer Bergmann, Rohrbach, DE;

Josef-Matthias Gantioler, Munich, DE;

Assignee:

Siemens Aktiengesellschaft, Berlin and Munich, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 53 ; 357 234 ; 357 238 ;
Abstract

A semiconductor component which comprises a planar structure which has a channel stopper 7 formed at one edge and a field electrode which covers a pn-junction 3 of the planar zones adjoining the edge 4. The blocking voltage can be increased by providing a channel stopper field plate 19 arranged over the channel stopper and an anode field plate 18 arranged over the field electrode and these field plates are spaced a greater distance from the surface 8 of the semiconductor body between the electrodes 18 and 19 and they have over the channel stopper electrode and the gate electrode.


Find Patent Forward Citations

Bergmann, Rainer. (1990). Mos semiconductor device which has high blocking voltage (U.S. Patent No. 4954868). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4954868

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…