Raghuram Gandikota

Title: Raghuram Gandikota: Semiconductor Structure Inventor

Introduction

Raghuram Gandikota is an inventor based in Portland, Oregon, whose patent work focuses on integrated circuit structures and semiconductor fabrication. He is associated with Intel Corporation and is named on 2 patents.

Latest Patents

Gandikota’s listed patents address transistor and integrated circuit design.

- Integrated Circuit Structures with Backside Self-Aligned Conductive Source or Drain Contact. This invention describes an integrated circuit structure with a sub-fin beneath a vertical stack of horizontal nanowires. An epitaxial source or drain structure is coupled to the nanowires, while a conductive contact sits beside the sub-fin and contacts the epitaxial structure without extending around it. The patent also describes methods for fabricating these structures.

- Integrated Circuit Structures with Gate Volume Reduction. This invention describes a structure with a sub-fin beneath a stack of nanowires and a dielectric backbone along one side of the stack. A gate electrode and gate dielectric are positioned along the other side. The patent also covers methods for fabricating integrated circuit structures with this reduced gate volume.

Career Highlights

Gandikota’s listed patent portfolio reflects work on semiconductor architectures, including backside source-or-drain contacts and gate structures for nanowire-based devices. His association with Intel Corporation connects this work to the company’s semiconductor research and development.

Collaborations

The provided information lists Leonard P. Guler and Krishna Ganesan as Gandikota’s coworkers. Their inclusion indicates professional connections, but the available details do not specify their roles in the patents.

Conclusion

Raghuram Gandikota’s two listed patents focus on integrated circuit structures that refine source-or-drain contacts and reduce gate volume, highlighting his contributions to semiconductor device design.