Raghav Khanna

Title: Raghav Khanna: Innovator in Hybrid Edge Termination Technology

Introduction

Raghav Khanna is a notable inventor based in Toledo, OH (US). He has made significant contributions to the field of power devices, particularly through his innovative patent related to hybrid edge termination structures.

Latest Patents

Raghav Khanna holds a patent for a "Multi-layer hybrid edge termination for III-N power devices." This invention presents a hybrid edge termination structure that is based on a junction termination extension (JTE) architecture. It includes an additional layer of guard ring structures to enhance the implantation of dopants into the structure. The hybrid edge termination structure features a three-layer design, with the top and bottom layers maintaining a constant dopant concentration laterally. The middle layer consists of alternating regions that exhibit the electrical properties of either the top or bottom layer. This innovative approach allows for a discretized varying charge profile that approximates the benefits of tapered edge termination while simplifying manufacturing and reducing costs.

Career Highlights

Raghav Khanna is currently associated with the USA as represented by the Secretary of the Navy. His work focuses on advancing technologies that improve the performance and efficiency of power devices.

Collaborations

Raghav has collaborated with notable colleagues, including Travis J Anderson and Mona A Ebrish, contributing to a dynamic work environment that fosters innovation.

Conclusion

Raghav Khanna's contributions to hybrid edge termination technology exemplify his commitment to advancing the field of power devices. His innovative patent reflects a blend of creativity and practicality, paving the way for future developments in this area.