Rached Hajjii

Title: Rached Hajjii: Innovator in Power Amplifier Technology

Introduction

Rached Hajjii is a notable inventor based in Murphy, Texas, recognized for his contributions to power amplifier technology. He has developed a unique patent that enhances the performance of power amplifiers through innovative design and engineering.

Latest Patents

Hajjii holds a patent for a "Power amplifier with quasi-static drain voltage adjustment." This invention features a transistor made from Gallium Nitride (GaN), specifically a field-effect transistor (FET) with a source, gate, and drain. The design allows for testing of process variations, and based on these variations, a microcontroller can adjust the drain voltage to enhance output power capability. This capability is crucial as the power amplifier's performance scales with the square of the drain voltage, enabling small adjustments to maintain reliability while offsetting slow process corners.

Career Highlights

Rached Hajjii is currently employed at Qorvo US, Inc., where he applies his expertise in power amplifier technology. His work focuses on advancing the efficiency and reliability of power amplifiers, contributing to the company's reputation as a leader in the semiconductor industry.

Collaborations

Hajjii collaborates with his coworker, Gangadhar Burra, to further innovate in the field of power amplifiers. Their combined efforts aim to push the boundaries of technology and improve product offerings.

Conclusion

Rached Hajjii's work in power amplifier technology exemplifies the impact of innovative thinking in engineering. His patent and contributions to Qorvo US, Inc. highlight the importance of advancements in this field.