The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Sep. 29, 2021
Qorvo Us, Inc., Greensboro, NC (US);
Joel Lawrence Dawson, Roslindale, MA (US);
Gangadhar Burra, Fremont, CA (US);
Frederick L. Martin, Plantation, FL (US);
Mark Briffa, Tyreso, SE;
Rached Hajjii, Murphy, TX (US);
Amin Shahverdi, Murphy, TX (US);
Elias Reese, Dallas, TX (US);
Nikolaus Klemmer, Dallas, TX (US);
Jeffrey Gengler, McKinney, TX (US);
Qorvo US, Inc., Greensboro, NC (US);
Abstract
A power amplifier with a quasi-static drain voltage adjustment is provided that has a transistor that is made from Gallium Nitride (GaN). In an exemplary aspect, the transistor is a field-effect transistor (FET) having a source, gate, and drain. The transistor is tested for process variations. Based on detected process variations, a microcontroller may raise a drain voltage to increase output power capability. Power capability of the power amplifier scales as the square of the drain voltage, so small adjustments are sufficient to offset the slow process corner while maintaining reliability.