Fujian, China

Qun Yan

This inventor holds 4 USPTO granted patents and 2 published patent applications and 4 EPO patents. Top assignees: Fuzhou University, Mindu Innovation Lab, Fuzhou University:mindu Innovation Lab. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qun Yan. Retrieved from https://idiyas.com/inventor/qun-yan-04f9wrzr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 4 

% Patents Active = 100.0

 

Average Co-Inventor Count = 6.9

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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4 patents (USPTO):Explore Patents

Title: Innovations of Qun Yan in nLED Technology

Introduction

Qun Yan is a notable inventor based in Fujian, China, recognized for his contributions to the field of light-emitting display technology. With a total of 4 patents, he has made significant advancements in the design and functionality of nLED devices.

Latest Patents

Qun Yan's latest patents include a non-direct electrical contact orientation ordered nLED light-emitting display device. This innovative device features an upper drive electrode substrate, an upper drive electrode, an nLED grain sheet, a lower drive electrode, and a lower drive electrode substrate arranged sequentially. It incorporates an AC drive control module that connects to both the upper and lower drive electrodes. The nLED grain sheet consists of multiple nLED grains arranged in order, ensuring that the light-emitting layer of each grain is parallel to the electrode substrates and perpendicular to the electric field. This design allows for the nLED grains to be illuminated through electromagnetic coupling, significantly reducing process costs by omitting the transfer of numerous μLEDs and nLEDs.

Another of his patents is a light-emitting display device based on special-shaped nLED grains. This device also includes an upper drive electrode substrate, an upper drive electrode, special-shaped nLED grains, a lower drive electrode, and a lower drive electrode substrate. The special-shaped nLED grains feature a non-planar luminous layer, enhancing electrical coupling efficiency and luminous efficiency when an AC drive signal is applied.

Career Highlights

Qun Yan has worked at Fuzhou University and Mindu Innovation Lab, where he has further developed his expertise in nLED technology. His work has contributed to the advancement of display technologies, making them more efficient and cost-effective.

Collaborations

Some of his notable coworkers include Yongai Zhang and Tailiangi Guo, who have collaborated with him on various projects related to nLED technology.

Conclusion

Qun Yan's innovative work in nLED technology has led to significant advancements in light-emitting display devices. His patents reflect a commitment to improving efficiency and reducing costs in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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