Qun Ya

Title: Qun Ya: Innovator in Capacitor Technology

Introduction

Qun Ya is a notable inventor based in Jiangsu, China, recognized for his contributions to the field of capacitor technology. With a total of 4 patents to his name, he has made significant advancements in the design and functionality of solid electrolytic capacitors.

Latest Patents

Qun Ya's latest patents include innovative designs aimed at enhancing the performance of capacitors. One of his notable inventions is a solid electrolytic capacitor with enhanced humidity resistance and a method for producing the same. This improved capacitor features an anode and a functional dielectric, along with a conductive layer on the dielectric. The design includes an anode wire that extends from the anode, which is equipped with a thickened dielectric layer. Another significant patent is the vertical stack approach in low profile aluminum solid electrolytic capacitors. This invention presents an improved capacitor and a method for its production, featuring planar anodes arranged in parallel, with each anode in direct electrical contact at the fusion end. The design incorporates a dielectric covering the active area of the capacitor, with spacers separating adjacent dielectrics.

Career Highlights

Throughout his career, Qun Ya has worked with prominent companies in the electronics industry, including Kemet Electronics Corporation and Kennet Electronics Corporation. His experience in these organizations has contributed to his expertise in capacitor technology and innovation.

Collaborations

Qun Ya has collaborated with several professionals in his field, including Liancai Ning and Chris Stolarski, who have contributed to his projects and innovations.

Conclusion

Qun Ya's work in capacitor technology showcases his innovative spirit and dedication to improving electronic components. His patents reflect a commitment to advancing the functionality and reliability of capacitors in various applications.