Mountain View, CA, United States of America

Quang Binh

This inventor holds 1 USPTO granted patent. Top assignee: Advanced Micro Devices Corporation. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Quang Binh. Retrieved from https://idiyas.com/inventor/quang-binh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 65(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Quang Binh: Innovator in NAND Technology

Introduction

Quang Binh is a notable inventor based in Mountain View, CA (US). He has made significant contributions to the field of memory technology, particularly in NAND flash memory.

Latest Patents

Quang Binh holds a patent titled "Double boosting scheme for NAND to improve program inhibit characteristics." This innovative method enhances the potential in the channel of unselected memory cells on a selected bit-line. The process involves applying a first voltage to all the word-lines of the memory cells in the string, followed by a second voltage to adjacent word-lines to isolate the selected memory cell. Finally, a programming voltage is applied to the selected word-line, with a time delay ensuring proper isolation before the application of the third voltage.

Career Highlights

Quang Binh is currently employed at Advanced Micro Devices Corporation, where he continues to develop cutting-edge technologies in the semiconductor industry. His work has been instrumental in advancing NAND flash memory capabilities.

Collaborations

Quang Binh has collaborated with talented coworkers such as Shane Charles Hollmer and Pau-Ling Chen, contributing to various projects within the company.

Conclusion

Quang Binh's innovative work in NAND technology exemplifies the impact of dedicated inventors in the tech industry. His patent and contributions continue to shape the future of memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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