The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2003

Filed:

Aug. 03, 2001
Applicant:
Inventors:

Shane C. Hollmer, San Jose, CA (US);

Pau-Ling Chen, Saratoga, CA (US);

Quang Binh, Mountain View, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract

A method for boosting potential in the channel of unselected memory cells on a selected bit-line. In this method, a first voltage is applied to all the word-lines of the memory cells in the string. A second voltage is then applied to word-lines adjacent the selected word lines to isolate the selected memory cell. Next, a programming voltage is applied to the selected word-line. In one embodiment, a time delay is applied between applying the second voltage and applying the third voltages to ensure isolation of the selected memory cell before applying the third voltage.


Find Patent Forward Citations

Hollmer, Shane. (2003). Double boosting scheme for nand to improve program inhibit characteristics (U.S. Patent No. 6504757). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6504757

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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