Qisen Dang

Title: Qisen Dang - Innovator in Silicon Technology

Introduction

Qisen Dang is a prominent inventor based in Shenyang, China. He has made significant contributions to the field of silicon technology, particularly in the preparation of multilayer monocrystalline silicon films. His innovative methods have the potential to enhance the efficiency and performance of silicon-based devices.

Latest Patents

Qisen Dang holds a patent for the "Preparation method of multilayer monocrystalline silicon film." This patent outlines a sequential process that begins with the use of two clean monocrystalline silicon slices. The surfaces of these slices are treated using plasma activation technology, followed by pre-bonding. The bonded slices are then subjected to annealing in a furnace at temperatures ranging from 200 to 300°C for a duration of 6 to 10 hours. This process is designed to prevent the formation of a transition region and ensure a complete bond between the silicon slices. The final steps involve thinning the annealed slices to a target thickness, resulting in a multilayer monocrystalline silicon film that exhibits favorable bonding effects.

Career Highlights

Qisen Dang is associated with Shenyang Silicon Technology Co., Ltd., where he continues to develop and refine his innovative techniques. His work has garnered attention for its potential applications in various industries, including electronics and renewable energy.

Collaborations

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Conclusion

Qisen Dang's contributions to silicon technology through his innovative patent demonstrate his commitment to advancing the field. His work not only enhances the understanding of silicon film preparation but also paves the way for future advancements in technology.