The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Jan. 17, 2019
Shenyang Silicon Technology Co., Ltd., Shenyang, CN;
Qisen Dang, Shenyang, CN;
Shenyang Silicon Technology Co., Ltd., Shenyang, CN;
Abstract
A preparation method of a multilayer monocrystalline silicon film sequentially includes: first, taking two monocrystalline silicon slices of which surfaces are clean, processing the surfaces of the silicon slices by a plasma activation technology, and then, performing pre-bonding; transferring the bonded silicon slices to an annealing furnace having a temperature of 200-300° C., and performing annealing for 6-10 hours to avoid generating a transition region and to completely bond the two silicon slices; thinning the annealed bonded slices to a desired target thickness; and taking the thinned SOI slice as Si-1, taking another monocrystalline silicon slice as Si-2, and performing the first three steps on Si-1 and Si-2 to obtain the multilayer monocrystalline silicon film. The silicon slices that are processed by the plasma activation technology have a large pre-bonding force during bonding. A favorable bonding effect is achieved after annealing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile