This inventor holds 1 USPTO granted patent. Top assignee: Zhejiang Jingsheng M & E Co., Ltd. Active years: 2018.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2018
Title: Qingliang Jiang: Innovator in Zone Melting Furnace Technology
Introduction
Qingliang Jiang is a notable inventor based in Shangyu, China. He has made significant contributions to the field of materials science, particularly in the development of technologies related to zone melting furnaces. His innovative approach addresses critical challenges in the growth of single crystal silicon.
Latest Patents
Qingliang Jiang holds a patent for an "Auxiliary heating device for zone melting furnace and heat preservation method for single crystal rod thereof." This invention aims to provide an auxiliary heating device that enhances the efficiency of zone melting furnaces. The device comprises an auxiliary heater positioned below a high-frequency heating coil, designed to prevent cracking in single crystal rods during the growth process. This innovation is particularly relevant for producing silicon single crystals larger than 6.5 inches.
Career Highlights
Qingliang Jiang is associated with Zhejiang Jingsheng M & E Co., Ltd., where he has been instrumental in advancing technologies related to crystal growth. His work has garnered attention for its practical applications in the semiconductor industry. With a focus on improving thermal field distribution, Jiang's inventions contribute to the reliability and quality of single crystal production.
Collaborations
Qingliang Jiang has collaborated with notable colleagues, including Gang Shi and Linjian Fu. Their combined expertise has fostered a productive environment for innovation and development in their field.
Conclusion
Qingliang Jiang's contributions to the field of zone melting furnace technology exemplify the importance of innovation in materials science. His patent addresses significant challenges in the production of single crystal silicon, showcasing his commitment to advancing technology in this critical area.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile