The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
May. 16, 2013
Zhejiang Jingsheng M & E Co., Ltd, Shangyu, CN;
Linjian Fu, Shangyu, CN;
Penggen Ouyang, Shangyu, CN;
Dantao Wang, Shangyu, CN;
Mingjie Chen, Shangyu, CN;
Gang Shi, Shangyu, CN;
Jianwei Cao, Shangyu, CN;
Minxiu Qiu, Shangyu, CN;
Qingliang Jiang, Shangyu, CN;
ZHEJIANG JINGSHENG M & E CO., LTD, Shangyu, Zhejiang, CN;
Abstract
The present invention aims at providing an auxiliary heating device for a zone melting furnace and a heat preservation method for a single crystal rod thereof. The auxiliary heating device comprises an auxiliary heater disposed below a high-frequency heating coil inside the zone melting furnace and is formed by winding a hollow metal circular pipe. The winding start end of the auxiliary heater is positioned on the upper part, the winding stop end of the auxiliary heating device is positioned on the lower part, and an upper end part and a lower end part are respectively guided out from the both ends; and a hollow cylindrical heating load is disposed on the inner side of the auxiliary heater, and an insulation part is disposed between the heating load and the auxiliary heater. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.5 inches.