This inventor holds 2 USPTO granted patents. Top assignee: Zhejiang Jingsheng M & E Co., Ltd. Active years: 2017-2018.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2017-2018
Title: Gang Shi - Innovator in Zone Melting Technology
Introduction
Gang Shi is a notable inventor based in Shangyu, China. He has made significant contributions to the field of zone melting technology, particularly in the development of devices that enhance the growth process of silicon single crystals. With a total of 2 patents to his name, his work addresses critical challenges in the industry.
Latest Patents
Gang Shi's latest patents include an "Auxiliary heating device for zone melting furnace" and a "heat preservation method for single crystal rod thereof." The auxiliary heating device is designed to improve the thermal field distribution within a zone melting furnace. It features an auxiliary heater made from a hollow metal circular pipe, strategically positioned to mitigate the cracking of single crystal rods during the growth process. The second patent focuses on a zone melting furnace thermal field with a dual power heating function, which also aims to enhance the thermal field distribution for silicon single crystals.
Career Highlights
Gang Shi is currently employed at Zhejiang Jingsheng M & E Co., Ltd., where he continues to innovate and develop advanced technologies in the field of materials science. His work is pivotal in addressing the challenges faced in the growth of high-quality silicon single crystals.
Collaborations
Gang Shi collaborates with talented coworkers, including Linjian Fu and Penggen Ouyang, who contribute to the innovative projects at their company.
Conclusion
Gang Shi's contributions to zone melting technology and his innovative patents play a crucial role in advancing the field of materials science. His work not only addresses existing challenges but also paves the way for future advancements in silicon crystal growth.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile