Company Filing History:
Years Active: 2006-2013
Title: Qingfeng Wang: Innovator in High Voltage Transistor Technology
Introduction
Qingfeng Wang is a prominent inventor based in Plano, TX (US). He has made significant contributions to the field of integrated circuits, particularly in the development of high voltage transistors. With a total of 6 patents to his name, Wang continues to push the boundaries of technology.
Latest Patents
One of Wang's latest patents is focused on a high voltage transistor using a diluted drain. This innovative design involves forming an integrated circuit that contains an extended drain MOS transistor. The process includes creating a drift region implant mask with mask fingers that abut a channel region and extend to the source/channel active area, while not extending to a drain contact active area. The dopants implanted through the exposed fingers form lateral doping striations in the substrate under the mask fingers. Notably, the average doping density of the drift region under the gate is at least 25 percent less than that of the drift region at the drain contact active area. In one embodiment, the dopants diffuse laterally to create a continuous drift region. In another embodiment, the substrate material between lateral doping striations remains of an opposite conductivity type from the lateral doping striations.
Career Highlights
Qingfeng Wang is currently employed at Texas Instruments Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of high voltage transistors, which are critical for various electronic applications.
Collaborations
Wang has collaborated with notable colleagues, including Binghua Hu and Sameer P Pendharkar. These partnerships have fostered innovation and contributed to the successful development of new technologies in the field.
Conclusion
Qingfeng Wang is a distinguished inventor whose work in high voltage transistor technology has made a significant impact on the industry. His innovative patents and collaborations continue to shape the future of integrated circuits.