The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2006
Filed:
Feb. 02, 2005
Xinfen Chen, Plano, TX (US);
Xiaoju Wu, Irving, TX (US);
John K. Arch, Richardson, TX (US);
Qingfeng Wang, Plano, TX (US);
Xinfen Chen, Plano, TX (US);
Xiaoju Wu, Irving, TX (US);
John K. Arch, Richardson, TX (US);
Qingfeng Wang, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method for monitoring a shift in a buried layer in a semiconductor device. The method for monitoring the shift in the buried layer, among other steps, includes forming a buried layer test structure in, on or over a substrate of a semiconductor device, the buried layer test structure including a first test buried layer located in or on the substrate, the first test buried layer shifted a predetermined distance with respect to a first test feature. The buried layer test structure further includes a second test buried layer lodated in the substrate, the second test buried layer shifted a predetermined but different distance with respect to a second test feature. The method for monitoring the shift in the buried layer may further include applying a test signal to the buried layer test structure to determine an actual shift relative to the predetermined shift.