The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
May. 25, 2007
Binghua HU, Plano, TX (US);
Sameer P. Pendharkar, Allen, TX (US);
Bill A. Wofford, Dallas, TX (US);
Qingfeng Wang, Plano, TX (US);
Binghua Hu, Plano, TX (US);
Sameer P. Pendharkar, Allen, TX (US);
Bill A. Wofford, Dallas, TX (US);
Qingfeng Wang, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Exemplary embodiments provide manufacturing methods for forming a doped region in a semiconductor. Specifically, the doped region can be formed by multiple ion implantation processes using a patterned photoresist (PR) layer as a mask. The patterned PR layer can be formed using a hard-bakeless photolithography process by removing a hard-bake step to improve the profile of the patterned PR layer. The multiple ion implantation processes can be performed in a sequence of, implanting a first dopant species using a high energy; implanting the first dopant species using a reduced energy and an increased implant angle (e.g., about 9° or higher); and implanting a second dopant species using a reduced energy. In various embodiments, the doped region can be used as a double diffused region for LDMOS transistors.