Shanghai, China

Qichao Liang

This inventor holds 1 USPTO granted patent. Top assignee: Shanghai Huali Integrated Circuit Corporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qichao Liang. Retrieved from https://idiyas.com/inventor/qichao-liang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Qichao Liang: Innovator in Semiconductor Technology

Introduction

Qichao Liang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced memory devices. His innovative approach has led to the creation of a unique method for manufacturing super flash memory.

Latest Patents

Qichao Liang holds a patent for a method for manufacturing a semiconductor device. This patent outlines a detailed process that includes several key steps. The first step involves forming first gate structures on a semiconductor substrate. The second step is a first etching process that etches the semiconductor substrate on at least one side of each first gate structure to a certain depth, forming a first groove. The third step is a stress memorization process, which includes forming a stress dielectric layer that covers the peripheral surface of each first gate structure and fills the first groove. This is followed by an annealing process to transfer the stress of the stress dielectric layer to the channel region, and finally, the removal of the stress dielectric layer. This innovative method enhances the mobility of channel carriers, thereby improving the performance of semiconductor devices.

Career Highlights

Qichao Liang is currently associated with Shanghai Huali Integrated Circuit Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of flash memory devices, making them more efficient and effective.

Collaborations

Qichao Liang has collaborated with notable colleagues in his field, including Zhi Tian and Feng Ji. Their combined expertise has contributed to the successful development of innovative semiconductor solutions.

Conclusion

Qichao Liang's contributions to semiconductor technology, particularly through his patented method for manufacturing super flash memory, highlight his role as a leading inventor in the industry. His work continues to influence advancements in memory technology, showcasing the importance of innovation in this rapidly evolving field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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