Beaverton, OR, United States of America

Qiang Fu

This inventor holds 2 USPTO granted patents. Top assignee: Intel Corporation. Active years: 2006-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qiang Fu. Retrieved from https://idiyas.com/inventor/qiang-fu-pxryugdc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 7(Granted Patents)


Location History:

  • Portland, OR (US) (2006)
  • Beaverton, OR (US) (2015)

Company Filing History:


Years Active: 2006-2015

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Qiang Fu in Microelectronics

Introduction

Qiang Fu, a prominent inventor based in Beaverton, Oregon, has made significant strides in the field of microelectronics. With a total of two patents to his name, he has demonstrated a commitment to innovation and improvement of integrated circuit technologies. His work not only enhances the performance of microelectronic devices but also contributes to the advancement of the semiconductor industry.

Latest Patents

Qiang Fu holds two notable patents that showcase his inventive prowess. The first patent, titled "Techniques for Enhancing Dielectric Breakdown Performance," discloses methods for improving the dielectric breakdown performance of integrated circuit interconnects. This invention involves selectively etching the dielectric layer to create a recess between neighboring interconnects. A higher dielectric breakdown field material can then be deposited to enhance the breakdown voltage, effectively preventing unwanted diffusion of interconnect metals into the dielectric material.

The second patent, "Process for Low K Dielectric Plasma Etching with High Selectivity to Deep UV Photoresist," outlines a method for forming microelectronic structures. This involves patterning a deep UV resist layer on a substrate and etching the substrate using a plasma to achieve substantially vertical sidewalls. The carbon to fluorine ratio in the gas used is crucial in optimizing this etching process. These innovative techniques are vital for the efficient manufacturing of microelectronic components.

Career Highlights

Qiang Fu's career at Intel Corporation, a leading technology company, has been marked by his innovative contributions to microelectronics. His research focuses on enhancing the efficiency and performance of integrated circuits. His dual patents underscore his ability to merge theoretical concepts with practical applications, making him a valuable asset to his team.

Collaborations

Throughout his career, Qiang Fu has collaborated with several colleagues, including Pavel S. Plekhanov and Kevin Fischer. These partnerships have fostered a dynamic exchange of ideas, further enriching the innovations emerging from their joint efforts. Such collaborations are essential in the fast-paced world of technology, where combined expertise can lead to groundbreaking developments.

Conclusion

In conclusion, Qiang Fu's contributions to microelectronics through his innovative patents illustrate the importance of continuous improvement in technology. His work at Intel Corporation and collaborations with fellow inventors highlight the collaborative nature of innovation in the semiconductor field. As technology evolves, inventors like Qiang Fu play a crucial role in shaping the future of microelectronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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