Qi Wang

Title: Innovations of Inventor Qi Wang

Introduction

Qi Wang is an accomplished inventor based in Lincoln, NE (US). He has made significant contributions to the field of semiconductor devices, particularly in the development of perovskite solar cells. With a total of 2 patents, his work focuses on enhancing the efficiency and stability of these devices.

Latest Patents

One of Qi Wang's latest patents is titled "Insulating tunneling contact for efficient and stable perovskite solar cells." This invention introduces an insulating tunneling layer that is inserted between the perovskite photoactive material and the electron collection layer. This layer reduces charge recombination and provides water-resistant properties to the device. Another notable patent is "Photovoltaic perovskite material and method of fabrication." This patent describes a semiconductor device and a method for its fabrication, which includes a perovskite layer formed using a solution process with lead iodine and methylammonium halide. The process involves spinning layers onto a substrate and annealing them to create a continuous-perovskite semiconductor device.

Career Highlights

Qi Wang has worked with reputable institutions such as the University of Nebraska and Nutech Ventures. His research and innovations have contributed to advancements in solar technology and semiconductor devices.

Collaborations

Throughout his career, Qi Wang has collaborated with notable colleagues, including Jinsong Huang and Qingfeng Dong. These collaborations have further enriched his research and development efforts in the field.

Conclusion

Qi Wang's innovative work in the realm of perovskite solar cells and semiconductor devices showcases his dedication to advancing technology. His patents reflect a commitment to improving efficiency and stability in renewable energy solutions.