Photovoltaic perovskite material and method of fabrication

Abstract

A semiconductor device and a method for fabrication of the semiconductor device are described that include a perovskite layer formed using a solution process with lead iodine and methylammonium halide. In an implementation, a semiconductor device that employs example techniques in accordance with the present disclosure includes a cathode layer; an anode layer; and an active layer disposed between the cathode layer and the anode layer, where the active layer includes a perovskite layer including an interdiffused and annealed lead iodine (PbI) film and methylammonium halide (CHNHX) film. In implementations, a process for fabricating a continuous-perovskite semiconductor device that employs example techniques in accordance with the present disclosure includes spinning a PbIlayer onto an ITO-covered glass; spinning an MAI layer onto the PbIlayer; annealing the PbIlayer and the MAI layer; spinning a PCBM layer onto a resulting perovskite layer; and depositing an Al layer.