Seongnam, South Korea

Pyong-Hwa Jang

This inventor holds 1 USPTO granted patent. Top assignee: Oci Company Ltd.. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pyong-Hwa Jang. Retrieved from https://idiyas.com/inventor/pyong-hwa-jang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Innovations by Pyong-Hwa Jang

Introduction

Pyong-Hwa Jang is a notable inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of semiconductor manufacturing. His innovative work focuses on improving etching solutions for silicon substrates.

Latest Patents

One of his key patents is titled "Etching solution for silicon substrate and method for manufacturing semiconductor device using the same." This patent discloses an etching solution specifically designed for silicon substrates. The solution adjusts the concentration of a silane compound to enhance the etching selectivity of silicon nitride films compared to silicon oxide films during the etching process.

Career Highlights

Pyong-Hwa Jang is currently associated with OCI Company Ltd., where he continues to develop and refine technologies in semiconductor manufacturing. His expertise in etching solutions has positioned him as a valuable asset in the industry.

Collaborations

He has collaborated with notable coworkers, including Ho-Seong Yoo and Myung-Hyun Kim, contributing to advancements in their field.

Conclusion

Pyong-Hwa Jang's innovative work in etching solutions for silicon substrates showcases his commitment to enhancing semiconductor manufacturing processes. His contributions are vital to the ongoing evolution of technology in this sector.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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