Icheon, South Korea

Pyeong Won Oh

This inventor holds 2 USPTO granted patents. Top assignee: Hynix Semiconductor Inc.. Active years: 2009-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pyeong Won Oh. Retrieved from https://idiyas.com/inventor/pyeong-won-oh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2009-2010

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2 patents (USPTO):Explore Patents

Title: Pyeong Won Oh: Innovator in Semiconductor Technology

Introduction

Pyeong Won Oh is a notable inventor based in Icheon, South Korea. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to capacitor design.

Latest Patents

His latest patents include a capacitor for a semiconductor device and its manufacturing method. This invention features a lower electrode formed over a predetermined lower structure on a semiconductor substrate. It incorporates an aluminum oxynitride film that exhibits low leakage current characteristics, along with a yttrium oxynitride film that has a higher dielectric constant than the aluminum oxynitride film. An upper electrode is formed over the yttrium oxynitride film, completing the capacitor design.

Career Highlights

Pyeong Won Oh is currently employed at Hynix Semiconductor Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the efficiency and performance of semiconductor devices.

Collaborations

He collaborates with talented coworkers, including Hoon Jung Oh and Hyo Gun Yoon, contributing to a dynamic and innovative work environment.

Conclusion

Pyeong Won Oh's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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