The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Aug. 25, 2005
Pyeong Won OH, Icheon-si, KR;
Woo Jin Kim, Icheon-si, KR;
Hoon Jung OH, Icheon-si, KR;
Hyo Gun Yoon, Icheon-si, KR;
Hyo Seob Yoon, Icheon-si, KR;
Baik IL Choi, Seoul, KR;
Pyeong Won Oh, Icheon-si, KR;
Woo Jin Kim, Icheon-si, KR;
Hoon Jung Oh, Icheon-si, KR;
Hyo Gun Yoon, Icheon-si, KR;
Hyo Seob Yoon, Icheon-si, KR;
Baik Il Choi, Seoul, KR;
Hynix Semiconductor Inc., Icheon-shi, KR;
Abstract
Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.