Suwon, South Korea

Pyeong Han Lee

This inventor holds 1 USPTO granted patent. Top assignee: Beyondmicro Inc. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pyeong Han Lee. Retrieved from https://idiyas.com/inventor/pyeong-han-lee-ner8b7dv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2006

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Pyeong Han Lee: Innovator in Phase Change Memory Technology

Introduction

Pyeong Han Lee is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of memory technology, particularly in the development of phase change memory devices. His innovative work has led to the creation of a patent that enhances the reliability and density of memory storage solutions.

Latest Patents

Pyeong Han Lee holds a patent for a "High-density phase change cell array and phase change memory device having the same." This invention focuses on a phase change memory cell array that is designed to implement high-density memory devices. The technology includes a first and second access transistor pair formed on a semiconductor substrate, which are adjacent to each other. Each pair has a common drain, and phase change resistance elements are formed on the source regions of the access transistors. This design improves the reliability of the contact forming process by providing sufficient space for the process, making it suitable for high-density semiconductor devices.

Career Highlights

Pyeong Han Lee is currently associated with Beyondmicro Inc., where he continues to work on advancing memory technology. His expertise in semiconductor devices has positioned him as a key player in the industry.

Collaborations

Some of his notable coworkers include Eu Gene Chu and Ju Ho Mo, who have collaborated with him on various projects related to memory technology.

Conclusion

Pyeong Han Lee's contributions to phase change memory technology exemplify his innovative spirit and dedication to advancing the field. His patent reflects a significant step forward in the development of high-density memory devices, showcasing his impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…