Noida, India

Praveen Kumar Verma

This inventor holds 2 USPTO granted patents. Top assignee: Synopsys, Inc.. Active years: 2022-2023.


% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 1


Company Filing History:


Years Active: 2022-2023

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2 patents (USPTO):Explore Patents

Title: Praveen Kumar Verma: Innovator in Memory Technology

Introduction

Praveen Kumar Verma is a notable inventor based in Noida, India. He has made significant contributions to the field of memory technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and functionality of memory systems.

Latest Patents

One of his latest patents is titled "Self-adjustable self-timed dual-rail SRAM." This invention involves a dual-rail memory that operates with two different supply voltages. It includes a memory array and a periphery circuit that features a clock generation circuit and a comparator. The design allows for the adjustment of voltage levels between the two supply voltages, optimizing performance.

Another significant patent is "Parallel port enablement in pseudo-dual-port memory designs." This invention describes a pseudo-dual-port memory (PDPM) that consists of multiple memory array banks. The PDPM incorporates parallel pin control logic circuitry to manage operations across these banks, enhancing the overall efficiency of memory access.

Career Highlights

Praveen Kumar Verma is currently employed at Synopsys, Inc., where he continues to innovate in the field of memory technology. His work at Synopsys has allowed him to collaborate with other talented professionals and contribute to cutting-edge advancements in the industry.

Collaborations

Some of his notable coworkers include Rohan Makwana and Vijit Gadi. Their collaborative efforts have further propelled advancements in memory technology and innovation.

Conclusion

Praveen Kumar Verma is a distinguished inventor whose contributions to memory technology are noteworthy. His patents reflect a commitment to innovation and efficiency in the field. His work continues to influence the development of advanced memory systems.

Profile summary based on public USPTO records.
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