San Jose, CA, United States of America

Praveen Kumar Kalsani

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Intel Ndtm US LLC. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Praveen Kumar Kalsani. Retrieved from https://idiyas.com/inventor/praveen-kumar-kalsani

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Praveen Kumar Kalsani: Innovator in 3D NAND Technology

Introduction

Praveen Kumar Kalsani is a notable inventor based in San Jose, CA. He has made significant contributions to the field of memory devices, particularly in the development of 3D NAND technology. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Kalsani holds a patent for a groundbreaking invention titled "3D NAND with IO contacts in isolation trench." This patent describes an embodiment of a memory device that includes a substrate, a first memory array of three-dimensional (3D) NAND cells disposed on the substrate, an isolation trench adjacent to the first memory array, and an input/output (IO) contact positioned within the isolation trench. Other embodiments are also disclosed and claimed in the patent.

Career Highlights

Praveen Kumar Kalsani is currently employed at Intel NDTM US LLC, where he continues to push the boundaries of technology. His work at Intel has allowed him to collaborate with other talented professionals in the field, enhancing the innovation process.

Collaborations

Some of Kalsani's coworkers include Ahmed Reza and Liu Liu. Their collective expertise contributes to the advancement of technology at Intel.

Conclusion

Praveen Kumar Kalsani is a distinguished inventor whose work in 3D NAND technology exemplifies innovation in the field of memory devices. His contributions are paving the way for future advancements in this critical area of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…