Pratik Patel

Title: Pratik Patel: Innovator in Tunneling Transistor Technology

Introduction

Pratik Patel is a notable inventor based in Berkeley, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of tunneling transistors. With a total of 2 patents to his name, Patel's work is paving the way for advancements in low voltage operations.

Latest Patents

Patel's latest patents focus on a tunneling transistor suitable for low voltage operation. Several embodiments of this tunneling transistor are disclosed. In one embodiment, a tunneling transistor includes a semiconductor substrate, a source region formed in the semiconductor substrate, a drain region formed in the semiconductor substrate, a gate stack including a metallic gate electrode and a gate dielectric, and a tunneling junction that is substantially parallel to an interface between the metallic gate electrode and the gate dielectric. As a result of the tunneling junction that is substantially parallel with the interface between the metallic gate electrode and the gate dielectric, an on-current of the tunneling transistor is substantially improved compared to that of a conventional tunneling transistor. In another embodiment, a tunneling transistor includes a heterostructure that reduces the turn-on voltage of the tunneling transistor.

Career Highlights

Pratik Patel is affiliated with the University of California, where he continues to innovate and contribute to research in semiconductor technology. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Patel has collaborated with esteemed colleagues such as Chenming Hu and Anupama Bowonder, further enhancing the impact of his research in the field.

Conclusion

Pratik Patel's contributions to tunneling transistor technology exemplify the innovative spirit of modern inventors. His work not only advances semiconductor technology but also opens new avenues for low voltage applications.