The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Apr. 17, 2009
Chenming HU, Oakland, CA (US);
Anupama Bowonder, Berkeley, CA (US);
Pratik Patel, Berkeley, CA (US);
Daniel Chou, Houston, TX (US);
Prashant Majhi, Austin, TX (US);
Chenming Hu, Oakland, CA (US);
Anupama Bowonder, Berkeley, CA (US);
Pratik Patel, Berkeley, CA (US);
Daniel Chou, Houston, TX (US);
Prashant Majhi, Austin, TX (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Several embodiments of a tunneling transistor are disclosed. In one embodiment, a tunneling transistor includes a semiconductor substrate, a source region formed in the semiconductor substrate, a drain region formed in the semiconductor substrate, a gate stack including a metallic gate electrode and a gate dielectric, and a tunneling junction that is substantially parallel to an interface between the metallic gate electrode and the gate dielectric. As a result of the tunneling junction that is substantially parallel with the interface between the metallic gate electrode and the gate dielectric, an on-current of the tunneling transistor is substantially improved as compared to that of a conventional tunneling transistor. In another embodiment, a tunneling transistor includes a heterostructure that reduces a turn-on voltage of the tunneling transistor.