Portland, OR, United States of America

Prabhjot Kaur Luthra

This inventor holds 2 USPTO granted patents and 6 published patent applications. Top assignee: Intel Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Prabhjot Kaur Luthra. Retrieved from https://idiyas.com/inventor/prabhjot-kaur-luthra

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 11.5

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Prabhjot Kaur Luthra - Innovator in Semiconductor Technology

Introduction

Prabhjot Kaur Luthra is an inventor based in Portland, OR (US). He is known for his contributions to semiconductor technology, particularly in the development of innovative techniques for integrated circuits. His work focuses on enhancing the functionality and efficiency of semiconductor devices.

Latest Patent Applications

Luthra has filed several patent applications, including:

1. **Bridging Contact Structures** - This application describes techniques to form an integrated circuit with a bridging contact structure. The bridging contact structure connects source/drain contacts to an adjacent gate electrode within the same device layer. The design includes a gate cut structure that separates the source or drain regions and gate structures of neighboring semiconductor devices. Contacts are formed over the source or drain regions on opposite sides of the gate cut, with conductive bridges replacing portions of dielectric barriers between the source or drain contacts and adjacent gate electrodes.

2. **Gate Link Across Gate Cut in Semiconductor Devices** - This application outlines techniques to form an integrated circuit with a gate cut between adjacent pairs of semiconductor devices. It includes a conductive link that connects adjacent gates through the gate cut. The design features semiconductor regions extending between source and drain regions, with a gate structure over the semiconductor regions. A dielectric layer covers the bridged gate electrodes and the conductive link, which may have varying thicknesses.

Conclusion

Prabhjot Kaur Luthra is making significant strides in the field of semiconductor technology through his innovative patent applications. His work aims to improve the design and functionality of integrated circuits, showcasing his commitment to advancing technology in this area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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