This inventor holds 1 USPTO granted patent. Top assignee: National Institute for Materials Science. Active years: 2021.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2021
Title: **Pohan Cheng: Innovating Magneto-Resistance Technology in Ibaraki, Japan**
Introduction
Pohan Cheng is a prominent inventor based in Ibaraki, Japan, whose innovative work has advanced the field of magneto-resistance technology. With a focus on enhancing the efficiency and applicability of magneto-resistance elements, Cheng has made significant contributions through his research and patent holdings.
Latest Patents
Cheng holds a patent for a magneto-resistance element that utilizes I-III-VI2 compound semiconductor technology. This invention is designed to provide a magneto-resistance (MR) element that demonstrates a high MR ratio and is suitable for various device applications. Specifically, the patent outlines a laminated structure comprised of two ferromagnetic layers, both made of Heusler alloy, separated by a non-magnetic layer that includes a chalcopyrite-type compound semiconductor. The non-magnetic layer, with a thickness of 0.5 to 3 nm, allows the MR element to achieve a significant magneto-resistance change of 40% or more, while maintaining a resistance-area (RA) of between 0.1 Ω·μm or more and 3 Ω·μm or less.
Career Highlights
Currently, Pohan Cheng is affiliated with the National Institute for Materials Science, where he pursues cutting-edge research and development in materials science. Through his dedication to innovation, Cheng has established himself as a key figure in the advancement of magneto-resistance technologies.
Collaborations
Cheng collaborates closely with notable colleagues, including Shinya Kasai and Yukiko Takahashi. Their teamwork has fostered a productive environment for innovation and has accelerated the progress of their research endeavors.
Conclusion
In conclusion, Pohan Cheng stands out as an influential inventor in the field of magneto-resistance elements. His patent demonstrates a crucial advancement in enhancing the functionality and applicability of MR technology. Through his work at the National Institute for Materials Science and his collaboration with esteemed colleagues, Cheng continues to push the boundaries of innovation in this emerging field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile