The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Jun. 23, 2017
National Institute for Materials Science, Ibaraki, JP;
Shinya Kasai, Ibaraki, JP;
Yukiko Takahashi, Ibaraki, JP;
Pohan Cheng, Ibaraki, JP;
Ikhtiar, Ibaraki, JP;
Seiji Mitani, Ibaraki, JP;
Tadakatsu Ohkubo, Ibaraki, JP;
Kazuhiro Hono, Ibaraki, JP;
NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Ibaraki, JP;
Abstract
An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layeron a substrate, wherein the first ferromagnetic layerincludes a Heusler alloy, the second ferromagnetic layerincludes a Heusler alloy, the non-magnetic layerincludes a I-III-VIchalcopyrite-type compound semiconductor, and the non-magnetic layerhas a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm] or more and 3 [Ωμm] or less.