Taichung, Taiwan

Po-Yi Tseng


Average Co-Inventor Count = 7.5

ph-index = 1


Company Filing History:


Years Active: 2018-2023

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2 patents (USPTO):Explore Patents

Title: Po-Yi Tseng: Innovator in Semiconductor Technology

Introduction

Po-Yi Tseng is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to manufacturing and ion generation.

Latest Patents

One of his latest patents is titled "Semiconductor device and fabrication method therefor." This patent describes a method of manufacturing a semiconductor structure that includes depositing a silicon layer over a substrate, removing a portion of the silicon layer to form a gate stack, and performing a hydrogen treatment on the gate stack to repair a plurality of voids in the stack structure. Another notable patent is "System and method for generating ions in an ion source." This invention outlines a method for generating ions in an ion source, which includes introducing a dopant gas and a diluent gas into an ion source arc chamber, and generating plasma based on these gases.

Career Highlights

Po-Yi Tseng is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing the technology used in various electronic devices.

Collaborations

He has collaborated with notable coworkers such as Yuan-Chun Sie and Chien-Hao Chen, contributing to a dynamic and innovative work environment.

Conclusion

Po-Yi Tseng's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic components.

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