The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Jan. 17, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Ming-Hui Li, Taichung, TW;
Stanley Chang, Wujie Township, Yilan County, TW;
Po-Yi Tseng, Taichung, TW;
Chia-Cheng Liu, Taichung, TW;
Chang-Chun Wu, Taichung, TW;
Shen-Han Lin, Taichung, TW;
Chih-Wen Huang, Pingzhen, TW;
Ming-Hsien Wu, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsin-Chu, TW;
Abstract
Embodiments of a method for generating ions in an ion source are provided. The method for generating ions in an ion source includes introducing a dopant gas and a diluent gas into an ion source arc chamber. The method for generating ions in an ion source further includes generating plasma in the ion source arc chamber based on the dopant gas and the diluent gas. In addition, the dopant gas includes carbon monoxide, and the diluent gas includes xenon and hydrogen.