Hsin-Chu, Taiwan

Po-June Chen

USPTO Granted Patents = 3 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2020-2025

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3 patents (USPTO):

Title: Po-June Chen: Innovator in Semiconductor Technology

Introduction

Po-June Chen is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced capacitor structures. With a total of three patents to his name, Chen's work is recognized for its innovative approaches to enhancing device performance.

Latest Patents

One of Po-June Chen's latest patents involves a method of manufacturing a three-dimensional (3D) metal-insulator-metal (MIM) capacitor in the back end of line (BEOL) processes. This invention provides large and tunable capacitance values while ensuring that it does not interfere with existing BEOL fabrication processes. The method includes several steps, such as forming conductive features on a semiconductor substrate, creating via structures, and establishing metallization structures that are conductively coupled to the features. This innovative approach allows for the formation of capacitors in deeper via holes, enhancing the overall efficiency of semiconductor devices.

Career Highlights

Po-June Chen is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading organization in the semiconductor industry. His work at this esteemed company has allowed him to push the boundaries of semiconductor technology and contribute to advancements that benefit the entire industry.

Collaborations

Throughout his career, Chen has collaborated with talented individuals such as Chun Huan Wei and Pin Yu Hsu.

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