Po Jen Cheng

Title: Po Jen Cheng: Innovator in Semiconductor Manufacturing

Introduction

Po Jen Cheng is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, holding a total of 3 patents. His innovative methods focus on enhancing the manufacturing processes of devices with high aspect ratios.

Latest Patents

Cheng's latest patents include a method for manufacturing a device having a high aspect ratio via. This method involves several steps, including the formation of a dielectric material layer with a through hole on a substrate, followed by the creation of a seed metallic layer. A metallic layer is then formed on the seed metallic layer and filled in the through hole. The process continues with etching the metallic layer using a spin etching process, resulting in a conductive via and a metallic trace that expose part of the seed metallic layer. Another patent details a method for manufacturing a device with a via structure, which includes forming a seed metallic layer, a patterned metallic-trace layer, and a positive-type photoresist layer. This method allows for the creation of a metallic pillar through electroplating, ensuring electrical isolation of the traces.

Career Highlights

Po Jen Cheng is currently employed at Advanced Semiconductor Engineering, Inc., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing manufacturing techniques that improve device performance and reliability.

Collaborations

Cheng collaborates with talented individuals such as Hsueh An Yang and Chiu Wen Lee, who contribute to his projects and research efforts.

Conclusion

Po Jen Cheng's contributions to semiconductor manufacturing through his innovative patents and collaborative efforts highlight his role as a key figure in the industry. His work continues to influence advancements in technology and manufacturing processes.