Anhui, China

Po-Hua Kung

This inventor holds 1 USPTO granted patent. Top assignee: Nexchip Semiconductor Co., Ltd. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Po-Hua Kung. Retrieved from https://idiyas.com/inventor/po-hua-kung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Po-Hua Kung: Innovator in Semiconductor Manufacturing

Introduction

Po-Hua Kung is a notable inventor based in Anhui, China. He has made significant contributions to the field of semiconductor manufacturing. His innovative methods have the potential to streamline production processes and reduce costs.

Latest Patents

Po-Hua Kung holds a patent for a "Method for manufacturing semiconductor device and semiconductor device thereby formed." This patent outlines a comprehensive method that includes preparing a substrate, forming a pad oxide layer and a barrier layer, and creating shallow trench isolation structures. The process simplifies manufacturing and enhances efficiency.

Career Highlights

Kung is currently associated with Nexchip Semiconductor Co., Ltd. His work focuses on advancing semiconductor technology, which is crucial for various electronic applications. His expertise in this field has positioned him as a valuable asset to his company.

Collaborations

He has collaborated with notable colleagues, including Zhongxiang Ma and Ching-Ming Lee. These partnerships have fostered innovation and contributed to the development of cutting-edge semiconductor solutions.

Conclusion

Po-Hua Kung's contributions to semiconductor manufacturing exemplify the impact of innovative thinking in technology. His patent and work at Nexchip Semiconductor Co., Ltd. highlight his role in advancing the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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