This inventor holds 1 USPTO granted patent. Top assignee: Hermes-Epitek Corporation. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: The Innovations of Po-fei Yang
Introduction
Po-fei Yang is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of materials science, particularly in the production of silicon carbide crystals. His innovative approach has led to advancements that are crucial for various applications in technology and industry.
Latest Patents
One of Po-fei Yang's key patents is titled "Apparatus for producing silicon carbide crystal." This invention includes a composite structure formed by multiple graphite layers and silicon carbide seed crystals. The design allows for a gradual adjustment of the density or thickness of each graphite layer, which helps to minimize the differences in thermal expansion coefficients and Young's modulus between the graphite layers and silicon carbide. This composite structure can be stabilized on the upper cover of a graphite crucible, effectively preventing the silicon carbide crystal from falling off during production.
Career Highlights
Po-fei Yang is currently employed at Hermes-Epitek Corporation, where he continues to work on innovative solutions in materials science. His expertise and dedication to research have positioned him as a valuable asset in his field.
Collaborations
Some of his notable coworkers include Chih-lung Lin and Chie-sheng Liu, who have collaborated with him on various projects and research initiatives.
Conclusion
Po-fei Yang's contributions to the field of silicon carbide crystal production exemplify the importance of innovation in materials science. His work not only advances technology but also paves the way for future developments in the industry.