The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Aug. 23, 2023
Applicant:

Hermes-epitek Corp., Taipei City, TW;

Inventors:

Chih-Lung Lin, Taipei City, TW;

PO-Fei Yang, Taipei City, TW;

Chie-Sheng Liu, Taipei City, TW;

Chung-Hao Lin, Taipei City, TW;

Hsin-Chen Yeh, Taipei City, TW;

Hao-Wen Wu, Taipei City, TW;

Assignee:

HERMES-EPITEK CORP., Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/02 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 23/025 (2013.01); C30B 29/36 (2013.01);
Abstract

An apparatus for producing silicon carbide crystal is provided and includes a composite structure formed by a plurality of graphite layers and silicon carbide seed crystals, wherein a density or thickness of each layer of graphite is gradually adjusted to reduce a difference of a thermal expansion coefficient and Young's modulus between the graphite layers and silicon carbide. The composite structure can be stabilized on a top portion or an upper cover of a crucible made of graphite, thereby preventing the silicon carbide crystal from falling off.


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