Po-Chun Chen

Title: Innovations by Po-Chun Chen in Flexible Thin Film Electrode Technology

Introduction

Po-Chun Chen is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of flexible electronics, particularly in the development of thin film metal oxide electrodes. His innovative approaches have paved the way for advancements in various applications, including flexible displays and sensors.

Latest Patents

One of Po-Chun Chen's key patents is titled "Selective chemical bath deposition of iridium oxide on thin film flexible substrates." This patent describes a method for fabricating flexible thin film metal oxide electrodes. The process allows for selective deposition of iridium oxide (IrOx) on flexible substrates, such as polyimide electrodes. The growth factors of the deposited film, including film thickness, deposition rate, and crystallite quality, can be controlled by adjusting the solution pH, temperature, and component concentrations of the bath. This selective deposition feature ensures that IrOx only coats exposed metal areas, maintaining electrical isolation between channels and facilitating the soldering process.

Career Highlights

Po-Chun Chen has worked at prestigious institutions, including the University of California and National Yang Ming Chiao Tung University. His research and development efforts have significantly impacted the field of flexible electronics, showcasing his expertise and innovative spirit.

Collaborations

Throughout his career, Po-Chun Chen has collaborated with esteemed colleagues, including Wentai Liu and Chih-Wei Chang. These collaborations have further enhanced his research and contributed to the advancement of flexible thin film technologies.

Conclusion

Po-Chun Chen's work in selective chemical bath deposition has opened new avenues in the fabrication of flexible thin film electrodes. His innovative methods and collaborations continue to influence the field, making him a prominent figure in the realm of flexible electronics.