Tainan City, Taiwan

PO-Chang Lin

This inventor holds 1 USPTO granted patent. Top assignee: United Microelectronics Corp.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: PO-Chang Lin. Retrieved from https://idiyas.com/inventor/po-chang-lin-t81v3py2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of PO-Chang Lin

Introduction: PO-Chang Lin is a notable inventor based in Tainan City, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents: PO-Chang Lin holds a patent for a semiconductor device having a bump between fin-shaped structures. This invention includes a first fin-shaped structure and a second fin-shaped structure on a substrate, with a bump positioned between them. The design features a first recess between the first fin-shaped structure and the bump, as well as a second recess between the second fin-shaped structure and the bump. Notably, the top surface of the bump is concave upward, its width exceeds twice that of the first fin-shaped structure, and its height is less than one fourth of the height of the first fin-shaped structure. This patent showcases his innovative approach to semiconductor design.

Career Highlights: PO-Chang Lin is currently associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His role at the company allows him to further explore and develop cutting-edge technologies in semiconductor devices.

Collaborations:

Conclusion: PO-Chang Lin's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of efficient semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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