Hsin-Chu, Taiwan

Pin Hsiang Chin


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: **Innovative Contributions of Pin Hsiang Chin in DRAM Technology**

Introduction

Pin Hsiang Chin is a notable inventor based in Hsin-Chu, Taiwan. With a focus on semiconductor technologies, he has developed methods that significantly enhance the performance of electronic devices. His expertise is exemplified through his innovative patented work that addresses advancements in dynamic random-access memory (DRAM) capacitors.

Latest Patents

Chin holds a patent for a "Method for fabricating a DRAM capacitor and device made." This invention discloses an innovative approach to forming DRAM capacitors that improve charge storage capacity. The process involves the alternating deposition of layers of BPTEOS oxide and PETEOS oxide onto a semiconductor substrate. A unique feature of this invention is the use of a wet etchant that selectively interacts with the PETEOS oxide layers, creating a zig-zag surface in the contact hole. This design enhances the overall charge storage capacity, enabling the formation of various capacitor types, such as stacked capacitors and fin-type capacitors.

Career Highlights

Chin’s professional journey includes significant contributions while working at Taiwan Semiconductor Manufacturing Company Limited. His role in the company has been pivotal in driving innovations in semiconductor fabrication techniques. With a keen focus on improving the efficiency and effectiveness of electronic components, Chin continues to make strides in this rapidly evolving industry.

Collaborations

As a member of the Taiwan Semiconductor Manufacturing Company Limited team, Chin collaborates with talented professionals, including his coworker Fouriers Tseng. Their combined efforts are vital in developing cutting-edge technologies that advance semiconductor manufacturing processes.

Conclusion

Pin Hsiang Chin stands out in the field of semiconductor technology as an inventor whose methodologies lead to significant advancements in DRAM capacitors. His patented techniques not only enhance performance but also contribute to the broader landscape of electronic innovations. Through his work, Chin exemplifies the spirit of innovation that drives the semiconductor industry forward.

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