The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2003
Filed:
Apr. 08, 1998
Pin Hsiang Chin, Hsin-Chu, TW;
Fouriers Tseng, Hsin-Chu, TW;
Taiwan Semiconductor Manufactoring Co., Ltd., Hsin Chu, TW;
Abstract
The present invention discloses a method for forming a DRAM capacitor that has improved charge storage capacity by first alternatingly depositing layers of BPTEOS oxide and PETEOS oxide onto a semiconductor substrate and then forming a contact hole through the insulating layers utilizing a wet etchant that has high selectivity for the PETEOS oxide layers such that a zig-zag surface is formed in the contact hole and subsequently a capacitor that has improved charge storage capacity. The present invention novel method can be used to form any type of stacked capacitors, for instance, a stacked capacitor, a fin-type stacked capacitor, a crown-type stacked capacitor, etc.