Dallas, TX, United States of America

Pijush Kanti Ghosh

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignees: University of Arkansas, USA as Represented by Secretary of the Navy. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pijush Kanti Ghosh. Retrieved from https://idiyas.com/inventor/pijush-kanti-ghosh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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2 patents (USPTO):Explore Patents

Title: Pijush Kanti Ghosh: Innovator in High-Temperature Capacitors and Radiation-Hardened Microelectronics

Introduction

Pijush Kanti Ghosh is a notable inventor based in Dallas, TX (US), recognized for his contributions to the fields of high-temperature capacitors and radiation-hardened microelectronic devices. He holds 2 patents that showcase his innovative approach to solving complex engineering challenges.

Latest Patents

One of his latest patents is focused on capacitors for high-temperature systems. This invention provides a capacitor that includes a substrate made from silicon carbide material, a dielectric stack layer, a Schottky contact layer, and an Ohmic contact layer. The first layer is formed with aluminum nitride (AlN) epitaxially, while the second layer is formed with aluminum oxide (AlO). These materials allow the capacitor to maintain capacitance changes of less than 10% between −250° C. and 600° C, making it highly effective for high-temperature applications.

Another significant patent by Ghosh is the quantum structure getter for radiation-hardened transistors. This microelectronic device incorporates a quantum structure getter (QSG) to enhance its resistance to radiation. The device includes a conductive channel and a material stack with a capping layer, barrier layers, and quantum structures. The quantum structures are strategically positioned to form a quantum well charge getter, which effectively traps and confines electron-hole pair wave functions produced from ionizing radiation, thereby hardening the device against ionizing radiation.

Career Highlights

Throughout his career, Pijush Kanti Ghosh has worked with various organizations, including the United States Navy and the University of Arkansas. His work has significantly impacted the development of advanced electronic components and systems.

Collaborations

Ghosh has collaborated with notable professionals in his field, including Mirsaeid Sarollahi and Kevin D. Goodman. These collaborations have contributed to the advancement of his innovative projects and patents.

Conclusion

Pijush Kanti Ghosh is a distinguished inventor whose work in high-temperature capacitors and radiation-hardened microelectronics has made a significant impact in the engineering field. His innovative patents reflect his commitment to advancing technology and addressing complex challenges in electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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