The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
May. 17, 2022
Board of Trustees of the University of Arkansas, Little Rock, AR (US);
Morgan Ware, Fayetteville, AR (US);
Pijush Kanti Ghosh, Dallas, TX (US);
Xiangbo Meng, Fayetteville, AR (US);
Mirsaeid Sarollahi, Fayetteville, AR (US);
Rohith Allaparthi, Fayetteville, AR (US);
BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS, Little Rock, AR (US);
Abstract
A capacitor is provided for high temperature systems. The capacitor includes: a substrate formed from silicon carbide material; a dielectric stack layer, including a first layer deposited on the substrate and a second layer deposited on the first layer; a Schottky contact layer deposited on the second layer; and an Ohmic contact layer deposited on the substrate. The first layer is formed with aluminum nitride (AlN) epitaxially, and the second layer is formed with aluminum oxide (AlO). AlN and AlOare ultrawide band gap materials, and as a result, they can be use as the dielectric in the capacitor, allowing the capacitance changes to be less than 10% between −250° C. and 600° C., which is very effective for the high temperature systems.