This inventor holds 1 USPTO granted patent. Top assignees: Centre National De La Recherche Scientifique, Commissariat a L'energie Atomique Et Aux Energies Alternatives, Ecole Centrale De Lyon. Active years: 2025.
Company Filing History:
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1 out of 8,816 
1 out of 40 
Years Active: 2025
Title: Pierre-Vincent Guenery: Innovator in Metal Oxide Semiconductor Production
Introduction
Pierre-Vincent Guenery is a notable inventor based in Saint-Berthevin, France. He has made significant contributions to the field of semiconductor technology, particularly in the production of non-contiguous metal oxide semiconductors. His innovative methods have implications for various applications in electronics and materials science.
Latest Patents
Pierre-Vincent Guenery holds a patent for a method for producing non-contiguous metal oxide semiconductors of uniform and controlled size and density. This method involves the production of nanostructures with a metal oxide shell, utilizing a top face of a substrate with a dimension greater than or equal to 100 mm through MOCVD (metal-organic chemical vapor deposition). The process includes successive steps of nucleation and growth, where non-contiguous metal nuclei are formed and subsequently oxidized to stabilize the nuclei. The growth phase involves further deposition and oxidation to create non-contiguous nanostructures.
Career Highlights
Throughout his career, Guenery has worked with prominent organizations such as the Commissariat à l'Énergie Atomique et aux Énergies Alternatives and the Centre National de la Recherche Scientifique. His work in these institutions has allowed him to advance his research and contribute to the development of innovative technologies in the semiconductor field.
Collaborations
Pierre-Vincent Guenery has collaborated with notable colleagues, including Thierry Baron and Jeremy Moeyaert. These partnerships have fostered a collaborative environment that enhances research and innovation in their respective fields.
Conclusion
Pierre-Vincent Guenery's contributions to the field of semiconductor technology through his innovative patent and collaborations highlight his role as a significant inventor. His work continues to influence advancements in the production of metal oxide semiconductors.