The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Nov. 26, 2020
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Universite Grenoble Alpes, Saint Martin d'Heres, FR;
Institut National Des Sciences Appliquees DE Lyon, Villeurbanne, FR;
Universite Claude Bernard Lyon 1, Villeurbanne, FR;
Ecole Centrale DE Lyon, Ecully, FR;
Ecole Superieure Chimie Physique Electronique Lyon, Villeurbanne, FR;
Pierre-Vincent Guenery, Saint-Berthevin, FR;
Thierry Baron, Saint-Egreve, FR;
Jeremy Moeyaert, Grenoble, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
UNIVERSITE GRENOBLE ALPES, Saint Martin d'Heres, FR;
INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON, Villeurbanne, FR;
UNIVERSITE CLAUDE BERNARD LYON 1, Villeurbanne, FR;
ECOLE CENTRALE DE LYON, Ecully, FR;
ECOLE SUPERIEURE CHIMIE PHYSIQUE ELECTRONIQUE LYON, Villeurbanne, FR;
Abstract
A method for producing nanostructures having a metal oxide shell, carried by a top face of a substrate whose greatest dimension is greater than or equal to 100 mm by MOCVD metalorganic chemical vapour deposition, including successive steps carried out in a reactor configured for MOCVD deposition of nucleation and growth. The nucleation step includes forming non-contiguous metal nuclei by depositing a metal by MOCVD using a metalorganic precursor on the top face of the substrate and oxidising the metal of the metal nuclei, to form oxidised nuclei and ensure stabilisation of the nuclei. The growth step includes depositing a metal by MOCVD using the metalorganic precursor, to form non-contiguous nanostructures by growth of the oxidised nanostructures, and oxidising the deposited metal of the nanostructures formed in the nucleation to form oxidised nanostructures.