Grenoble, France

Jeremy Moeyaert

This inventor holds 1 USPTO granted patent. Top assignees: Centre National De La Recherche Scientifique, Commissariat a L'energie Atomique Et Aux Energies Alternatives, Ecole Centrale De Lyon. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeremy Moeyaert. Retrieved from https://idiyas.com/inventor/jeremy-moeyaert

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Jeremy Moeyaert: Innovator in Metal Oxide Semiconductor Production

Introduction

Jeremy Moeyaert is a notable inventor based in Grenoble, France. He has made significant contributions to the field of semiconductor technology, particularly in the production of non-contiguous metal oxide semiconductors. His innovative methods have the potential to advance the capabilities of nanostructures in various applications.

Latest Patents

Moeyaert holds a patent for a method for producing non-contiguous metal oxide semiconductors of uniform and controlled size and density. This method involves the production of nanostructures with a metal oxide shell, utilizing a top face of a substrate with dimensions greater than or equal to 100 mm through MOCVD (metalorganic chemical vapor deposition). The process includes successive steps in a reactor configured for MOCVD deposition, which encompasses nucleation and growth phases. The nucleation step involves forming non-contiguous metal nuclei by depositing a metal using a metalorganic precursor and oxidizing the metal to stabilize the nuclei. The growth step further develops these structures by depositing additional metal and oxidizing the newly formed nanostructures.

Career Highlights

Throughout his career, Jeremy Moeyaert has worked with prominent organizations such as the Commissariat à l'Énergie Atomique et aux Énergies Alternatives and the Centre National de la Recherche Scientifique. His work in these institutions has allowed him to refine his expertise in semiconductor technologies and contribute to groundbreaking research.

Collaborations

Moeyaert has collaborated with esteemed colleagues, including Pierre-Vincent Guenery and Thierry Baron. These partnerships have fostered an environment of innovation and have led to advancements in the field of semiconductor production.

Conclusion

Jeremy Moeyaert's contributions to the field of metal oxide semiconductors exemplify the impact of innovative thinking in technology. His patented methods and collaborative efforts continue to influence advancements in semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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