Phoebe P Yeoh

Title: Phoebe P Yeoh: Innovator in Memory Device Technology

Introduction

Phoebe P Yeoh is a prominent inventor based in Albuquerque, NM (US). She has made significant contributions to the field of memory device technology. Her innovative work has led to the development of a patented method that enhances memory operations.

Latest Patents

Phoebe P Yeoh holds a patent for an "Apparatus, method and system to reduce memory window latency and read disturb in a memory device for memory operations." This invention includes a method, apparatus, and system that utilizes one or more processors to determine when a memory operation, such as a write or read operation, is to be implemented on a memory cell. The operation is characterized by a latency window and is based on a voltage change across the memory cell. The invention also involves applying a current pulse amplitude profile to the memory cell during the latency window, which progressively decreases and encompasses at least four different current pulse amplitudes.

Career Highlights

Phoebe P Yeoh is currently employed at Intel Corporation, where she continues to push the boundaries of technology in memory devices. Her work has been instrumental in improving the efficiency and reliability of memory operations.

Collaborations

Phoebe collaborates with various professionals in her field, including her coworker Hemant P Rao. Their combined expertise contributes to the advancement of innovative solutions in memory technology.

Conclusion

Phoebe P Yeoh is a trailblazer in the realm of memory device technology, with her patented innovations paving the way for future advancements. Her contributions are vital to the ongoing evolution of memory operations in electronic devices.